Memory & Storage Interfaces
Capacity, bandwidth, flash write time, endurance and EEPROM address calculators, plus storage-technology tables and memory-interface diagrams.
Capacity โ Address Lines
Memory Bandwidth
Flash / EEPROM Write Time
Flash Endurance / Life
I2C EEPROM Address
๐ Memory & Interface Diagrams
The storage hierarchy, common non-volatile memory buses (SPI/QSPI and I2C), a six-transistor SRAM cell, a one-transistor DRAM cell and a parallel memory bus.
Memory hierarchy โ Fast, small, expensive memory sits close to the CPU; large cheap storage sits far away. Caches copy frequently used data upward so most accesses hit the fastest level.
SPI / QSPI NOR โ A small pin count boots code from NOR flash: CLK and chip-select plus bidirectional IO lines. QSPI uses four IO lines to fetch data up to four bits per clock for fast xip (execute-in-place).
I2C EEPROM โ SDA and SCL are open-drain with pull-ups to VDD; the controller addresses each EEPROM by its strap pins. A3=1 on larger parts extends the page address beyond the three pins shown.
6-T SRAM cell โ Two cross-coupled inverters hold a bit; two pass transistors gate it onto the bit lines when the word line is high. Static โ no refresh, but needs a constant supply and six transistors per bit.
1-T DRAM cell โ A single access transistor and a small capacitor store the bit; the charge leaks away, so every row must be refreshed. Far denser and cheaper per bit than SRAM, which is why RAM is DRAM.
Parallel memory bus โ Wide address and data buses plus chip-select, write and read strobes talk to the array directly. Fast and simple, but each bit costs a pin โ why high-density parts moved to SPI/QSPI/OSPI.
SD / SDIO card interface โ A clock plus a bidirectional command line and 4 data lines talk to one card. Closing the RD/WR CRC in firmware and handling busy (DAT0 low) correctly matters more than raw speed.
DDR SDRAM interface โ Address and bank pins plus bidirectional data and a strobe pin per byte lane. The data strobe is source-synchronous, so timing is captured against DQS rather than the CPU clock; short matched traces and a controlled impedance matter.
NAND block & page layout โ A block holds many pages; a page is typically a few KiB of data plus a spare (OOB) area. Erase happens per-block, program per-page, and bad blocks are marked in the OOB โ wear leveling and ECC live in the controller.
Address decode & chip select โ Upper address lines go to a decoder that raises exactly one chip-select per window while the lower lines and data bus are shared. Only the selected chip responds, so each region maps to a unique address range.
๐ Storage Reference Tables
Memory technologies, SPI-flash addressing and write-endurance figures. Values are representative โ check the component datasheet.
Memory Technologies
| Technology | Speed | Volatile | Endurance |
|---|---|---|---|
| SRAM | fastest | yes (no refresh) | nearly unlimited |
| DRAM | fast | yes (refresh ~64 ms) | very high |
| NOR Flash | read fast | no | 10kโ100k |
| NAND Flash | fast sequential | no | 1kโ100k + ECC |
| EEPROM | slow write | no | ~1M byte writes |
| FRAM | fast, no erase | no | 10ยนยนโ10ยนยฒ |
SPI Flash Density & Addressing
| Density | Address width | Typical read cmd |
|---|---|---|
| 1โ16 Mbit | 24-bit | 0x03 (read) |
| 32โ256 Mbit | 24-bit | 0x03 / 0x0B (fast) |
| > 512 Mbit | 32-bit (0x3C) | fast / QPI |
Write Endurance Reference
| Item | Typical rated cycles |
|---|---|
| EEPROM byte / page | ~1 000 000 |
| NOR flash sector | ~100 000 |
| NAND / eMMC block | ~3 000โ100 000 |
| FRAM / MRAM | > 10ยนยน |